N. Fender, P.J. Brock, et al.
Proceedings of SPIE - The International Society for Optical Engineering
We measure the voltage at which the current under illumination in poly[2-methoxy, 5-(2-ethylhexoxy)-1,4-phenylene vinylene] based light emitting diodes is equal to the dark current. At low temperatures, this voltage, which we term the "compensation" voltage, is found to be equal to the built-in potential, as measured with electroabsorption on the same diode. Diffusion of thermally injected charges at room temperature, however, shifts the compensation voltage to lower values. A model explaining this behavior is developed and its implications for the operation of organic light emitting diodes and photovoltaic cells are briefly discussed. © 1998 American Institute of Physics.
N. Fender, P.J. Brock, et al.
Proceedings of SPIE - The International Society for Optical Engineering
L.D. Bozano, B.W. Kean, et al.
Applied Physics Letters
J.C. Scott, George G. Malliaras, et al.
Applied Physics Letters
Thomas I. Wallow, P.J. Brock, et al.
SPIE Advances in Resist Technology and Processing 1999