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SPIE Advances in Semiconductors and Superconductors 1990
Energy distributions at hν =21.2 eV show the energy levels and level widths of sorbed gases (H2, N2, CO, CO2 and O2) on Ti. CO and CO2 appear to dissociate into Ti/0 + Ti/C upon adsorption. Exposure to {greater-than or approximate} 10-4Torr sec of H2 and O2 results in the formation of Ti compounds on the surface. © 1972.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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MRS Spring Meeting 1999
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