Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The roles of the two stacks in the phase transition(s) of tetraselenafulvalene-tetracyanoquinodimethane (TSeF-TCNQ) have been further investigated by means of dc-conductivity experiments on the acceptor-doped material TSeF-(TCNQ)1-y(monomethylTCNQ)y. The temperature of the phase transition in TSeF-TCNQ seen as a peak in dlnRd(1T) at 27 K shifts only marginally with y for 0≤<y0.01. The height of the peak is strongly affected, however, being reduced to half its original value when y=0.003. From these results and earlier results of tetrathiafulvalene doping of the TSeF stacks, we conclude that if the two kinds of stacks have comparable tendencies toward a Peierls instability, then the interstack-hybridization explanation of the low Tc and its dependence on donor doping is in stronger agreement with the acceptor-doping results than is the dynamic-screening explanation. A new, weak, and unexplained resistivity anomaly is also revealed at 21 K for these small values of y, which might also be present in undoped samples. © 1982 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Hiroshi Ito, Reinhold Schwalm
JES
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989