Aditya Bansal, Keunwoo Kim, et al.
ICICDT 2007
Conference paper
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
Abstract
The performance assessment of scaled strained-silicon channel-on-insulator (SSOI) CMOS was discussed. Bulk-strained-silicon (SS) and unstrained-silicon devices were fabricated. The predicted results of energy dissipation over one switching cycle for the bulk-Si, bulk-SS and SSOI CMOS circuits was compared. The SSOI CMOS was found to exhibit the lowest energy dissipation.
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