PBTI in InGaAs MOS capacitors with Al₂O₃/HfO₂/TiN gate stacks: Interface-state generation

Using devices with well passivated interfaces and reduced electron trapping, it is demonstrated that significant interface-state generation occurs during PBTI stress in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks. These observations on capacitors imply that the impact of interface-state generation on mobility and subthreshold-degradation need to be monitored in III-V nFET in addition to electron trapping in the gate stack.