Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A review is given of experiments on the conductance of 1D MOSFET's. The types of samples studied, the phenomena observed and our theoretical understanding of these phenomena are discussed. Particular attention is given to the strong localization regime and the structure in the conductance as a function of gate voltage. © 1984.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990