I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Dips in the photoconductive spectral response of many-valleyed semiconductors at multiples of the intervalley phonon emission threshold energies are predicted; in analogy to the photoconductivity oscillations due to LO phonon interaction observed in many semiconductors. The conditions for a successful experiment are discussed in detail for the case of donor-conduction band transitions in Si. © 1968.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Julien Autebert, Aditya Kashyap, et al.
Langmuir
J.A. Barker, D. Henderson, et al.
Molecular Physics
Lawrence Suchow, Norman R. Stemple
JES