On-chip power supply noise measurement using time resolved emission (TRE) waveforms of light emission from off-state leakage current (LEOSLC)

In this paper, a new emission-based methodfor measuring the amplitude ofon-chip power supply noise is presented. This technique uses Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC) from CMOS gates, which are used as local probe points for the noise. In order to demonstrate the capabilities of this technique, we discuss the results obtained for two early microprocessor chips fab ricated in 65 nm and 45 nm Silicon On Insulator (SOl) technologies. © 2009 IEEE.