I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
We present the normal-state resistance of La2-xSrxCuO4 thin films under epitaxial strain, measured below Tc by applying pulsed fields up to 60 T. We compare these data with earlier data on YBa2Cu3Ox thin films in the underdoped regime. The data are analyzed in terms of the recently proposed ID quantum transport model and charge-stripe models. The high field data have been used to identify the new regimes and dimensional crossovers caused by the formation of stripes and their interplay with disorder. © 2000 Elsevier Science B. V. All rights reserved.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
David B. Mitzi
Journal of Materials Chemistry