D. Guidotti, J.S. Batchelder, et al.
Journal of Applied Physics
In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
D. Guidotti, J.S. Batchelder, et al.
Journal of Applied Physics
R. Tsu, L. Esaki
Applied Physics Letters
J.A. Van Vechten, J.F. Wager
Physical Review B
J.A. Van Vechten
Applied Physics Letters