A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We present a theoretical investigation and discussion of N doping in ZnSe and ZnTe, based on first-principles calculations. We find that the experimentally observed trend in doping efficiency can be attributed to the higher solubility of N in ZnTe. We also discuss the potential formation of complexes between the N acceptor and native defects, the change in lattice constant of ZnSe due to heavy N doping, and some problems associated with N as an acceptor dopant. © 1995.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Robert W. Keyes
Physical Review B
David B. Mitzi
Journal of Materials Chemistry