E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We present a theoretical investigation and discussion of N doping in ZnSe and ZnTe, based on first-principles calculations. We find that the experimentally observed trend in doping efficiency can be attributed to the higher solubility of N in ZnTe. We also discuss the potential formation of complexes between the N acceptor and native defects, the change in lattice constant of ZnSe due to heavy N doping, and some problems associated with N as an acceptor dopant. © 1995.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
R. Ghez, M.B. Small
JES
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989