Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Quasihydrostatic pressure resistivity experiments on a single crystal of SmS are reported up to 27.5 kbar. At low temperature, a regime change occurs at P ∼ 20 kbar, between a "quasiinsulating" behavior (P < 20 kbar) and a metallic ground state (P 20 kbar). Striking similarities appear with TmSe and TmS cases. © 1981.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Imran Nasim, Melanie Weber
SCML 2024
Lawrence Suchow, Norman R. Stemple
JES
A. Gangulee, F.M. D'Heurle
Thin Solid Films