R. Hull, J. Floro, et al.
Materials Science in Semiconductor Processing
Dislocation interactions play a critical role in plasticity and heteroepitaxial strain relaxation. We use real time transmission electron microscopy observations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addition to the expected long-range blocking of threading segments, we observe a new short-range mechanism which is significantly more effective. Simulations show that this reactive blocking occurs when two dislocations with the same Burgers vector reconnect. © 2000 The American Physical Society.
R. Hull, J. Floro, et al.
Materials Science in Semiconductor Processing
M. Kammler, D. Chidambarrao, et al.
Applied Physics Letters
X.-H. Liu, F.M. Ross, et al.
MRS Proceedings 2001
K.W. Schwarz
Modelling and Simulation in Materials Science and Engineering