Positive bilayer resists for 248- and 193-nm lithography
Ratnam Sooriyakumaran, Gregory M. Wallraff, et al.
Microlithography 1998
A new class of polymeric negative x-ray and electron beam resists is described. Polystyrene-tetrathiafulvalene films doped with a halocarbon acceptor show good sensitivity to x-rays (D1/2=44 mJ/cm2) and electron beams (D1/2=6 μC/cm2), with high contrast values γ≳2.5, and with no evidence for the classical swelling phenomena. In electron beam exposures at 10 μC/cm2, parallel wall patterns are produced with pattern resolution of 1000 Å or better. Reasons for the improvement in lithographic parameters relative to previous negative resists are briefly discussed.
Ratnam Sooriyakumaran, Gregory M. Wallraff, et al.
Microlithography 1998
James L. Hedrick, Jeff W. Labadie, et al.
Polymer Bulletin
Frank B. Kaufman, Albert H. Schroeder, et al.
Applied Physics Letters
Donald C. Hofer, Robert Allen, et al.
J. Photopolym. Sci. Tech.