A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
A report is presented on the high-performance nanoscale transistors for future computers. Carbon nanotube transistors integrated with ZrO2 gate oxides are emerging as very promising candidates. Carbon nanotubes are inert, present no surface states and are compatible with other materials such as oxides.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
T.N. Morgan
Semiconductor Science and Technology
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP