R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Ellen J. Yoffa, David Adler
Physical Review B
Mark W. Dowley
Solid State Communications
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011