A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
J.Z. Sun
Journal of Applied Physics
A. Krol, C.J. Sher, et al.
Surface Science