Robert W. Keyes
Physical Review B
Far-ultraviolet radiation (e.g. 185 nm from a mercury resonance lamp or 193 nm from a pulsed excimer laser) is highly effective in modifying the surfaces of a variety of polymers because of its short penetration depth (< 3000 A ̊) and its high (>0.1) quantum yield for bond breaking. With continuous low-level irradiation at 185 nm in the presence of specific gases functional groups can be introduced on the surface while etching is kept at a low rate. In contrast, the pulsed laser radiation at 193 nm causes ablative photodecomposition leading to a surface showing negligible reaction with the surrounding atmosphere. This process can be conveniently used in controlled etching of polymers.
Robert W. Keyes
Physical Review B
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
H.D. Dulman, R.H. Pantell, et al.
Physical Review B