E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The growth of high-quality epitaxial CaSi2 films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the CaSi2/Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides. © 1988 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
P.C. Pattnaik, D.M. Newns
Physical Review B
J. Tersoff
Applied Surface Science
R. Ghez, J.S. Lew
Journal of Crystal Growth