The DX centre
T.N. Morgan
Semiconductor Science and Technology
The growth of high-quality epitaxial CaSi2 films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the CaSi2/Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides. © 1988 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
P. Alnot, D.J. Auerbach, et al.
Surface Science
Sung Ho Kim, Oun-Ho Park, et al.
Small
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993