F.M. D'Heurle, P. Gas, et al.
Defect and Diffusion Forum
Paper
Measurements of the rectifying barrier heights of various rhodium silicides with n-silicon
Abstract
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Rh, RhSi, Rh4S 5, and Rh3Si4 have been determined by means of photoresponse, capacitance, and forward current-voltage measurements. The results are compared to the results previously obtained with iridium, and with other plantinum related elements.
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