R. Ghez, M.B. Small
JES
Connectivity in metallic nanowire networks with resistive junctions is manipulated by applying an electric field to create materials with tunable electrical conductivity. In situ electron microscope and electrical measurements visualize the activation and evolution of connectivity within these networks. Modeling nanowire networks, having a distribution of junction breakdown voltages, reveals universal scaling behavior applicable to all network materials. We demonstrate how local connectivity within these networks can be programmed and discuss material and device applications. © 2012 American Chemical Society.
R. Ghez, M.B. Small
JES
R. Ghez, J.S. Lew
Journal of Crystal Growth
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering