Magnetoresistance Anisotropy and Magnetization Reversal Processes in two Different Kinds of Amorphous Ferromagnets: A- Tb20(Fe4COl)80 AND a-U45Sb45Mn10

New amorphous U-Sb-Mn ferromagnets with magnetoresistance anisotropy reaching 9% at low temperature have been recently discovered. In this article we compare the magnetoresistance hysteresis cycles for these new systems with those obtained in amorphous Tb-Fe-Co films. Results are discussed in terms of excess resistivity caused by domain walls at ±Hc and resistivity anisotropy at saturation. Both effects are important in a-Tb-Fe-Co and U-Sb-Mn, The excess resistivity at ± Hc scales with │β‘│2 where β’ is the tangent of the Hall angle. © 1990 IEEE