The DX centre
T.N. Morgan
Semiconductor Science and Technology
U1-xSbx, amorphous ferromagnets were prepared that show a magnetoresistance anisotropy (AMR) reaching 26% at 10 K, in a 50kOe field. This is a striking result, since the AMR of typical amorphous ferromagnets does not exceed 1%. These materials are random anisotropy ferromagnets, with large coercive fields reaching 20 kOe at 10 К and with Curie temperatures ranging from 92 to 132K. Magnetization reversal processes at mean-free path level are discussed based on magnetoresistance hysteresis cycle data. The local magnetization reversal processes are found to be highly dependent on the magnetic history of the sample. © 1991 IOP Publishing Ltd.
T.N. Morgan
Semiconductor Science and Technology
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007