J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
The conventional result for the screening length in a semiconductor with a discrete impurity level vanishes at absolute zero. When level broadening is included in a self-consistent way, a finite value is obtained. Results for the screening length and the root-mean-square potential fluctuation at absolute zero are given as functions of the degree of compensation. © 1974 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures