Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
We have studied tunneling transport through a high-mobility two-dimensional electron gas in a GaSb/AlSb/ InAs/AlSb/GaSb heterostructure. In high perpendicular magnetic fields and at temperatures below 1 K the tunneling conductance shows deviations from regular Shubnikov-de Haas oscillations. An overall decrease in conductance with decreasing temperature is attributed to the formation of a Coulomb gap in the tunneling density of states. Reproducible conductance fluctuations are due to resonant tunneling possibly through interface-related states. © 1994.
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
David B. Mitzi
Journal of Materials Chemistry
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009