Low-energy electron diffraction determination of the atomic arrangement on impurity-stabilized unreconstructed Si{111} surfaces

An impurity-stabilized Si{111} 1×1 structure has been obtained by depositing minute amounts of Te on a clean Si{111} 7×7 surface. A low-energy electron diffraction structure analysis of this 1×1 structure reveals that the atomic arrangement is essentially bulklike, but involves a slight contraction of the first interlayer spacing by about 15% with respect to the bulk value. © 1976 The American Physical Society.