Sung Ho Kim, Oun-Ho Park, et al.
Small
Paper
Low density of states at the epitaxial CaF2-Si(111) interface
Abstract
The density of interface states at the epitaxial CaF2-Si(111) interface grown under UHV conditions at 700 °C is found to be much lower than assumed previously, as revealed from photoelectron spectroscopy. An upper limit is estimated to be 3 × 1012 cm-2 eV-1 near midgap, which comes close to values obtained for SiO2-Si interfaces.
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