Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We consider the problem of approximating the strong dislocation interactions which occasionally take place during the numerical simulation of dense dislocation systems. Local rules are proposed to govern the behaviour of those tracking points that find themselves in an under-resolved environment. It is shown that these rules, utilizing only nearest-neighbour information, satisfactorily approximate more fully resolved calculations of localized dislocation-dislocation interactions, of extended structures such as junctions, and of higher order processes such as dislocation-junction and junction-junction interactions. Use of these rules should make it possible to do efficient large-scale numerical dislocation simulations, while still retaining the important qualitative effects arising from strong local interactions.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
P. Alnot, D.J. Auerbach, et al.
Surface Science