M. Hargrove, S.W. Crowder, et al.
IEDM 1998
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
R. Ghez, J.S. Lew
Journal of Crystal Growth
A. Krol, C.J. Sher, et al.
Surface Science