Leakage analysis for FinFET devices using self-consistent electro-thermal modeling

A novel 3D computational self-consistent electro-thermal modeling methodology is developed to more precisely analyze leakage currents in nanoscale FinFET devices. The coupled electro-thermal modeling is applied to compare the device performance of poly-Si gate and metal-gate DG-FinFET. Results show very high leakage current in band-edge metal-gate device and poly-Si gate device. Mid-gap metal-gate device appears as a good choice at short-channel lengths to avoid excessive leakage power. The impact of device temperature rise on the leakage and drive currents is analyzed. ©2007 IEEE.