Conference paperUnderstanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETsHiroshi Miki, M. Yamaoka, et al.VLSI Technology 2011
PaperSilicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam EpitaxyGary L. Patton, Subramanian S. Iyer, et al.IEEE Electron Device Letters
PaperUnpinned GaAs MOS Capacitors and TransistorsSandip Tiwari, Steven L. Wright, et al.IEEE Electron Device Letters
PaperMaterial properties of p-type GaAs at large dopingsSandip Tiwari, Steven L. WrightApplied Physics Letters
