The DX centre
T.N. Morgan
Semiconductor Science and Technology
Using magneto-optical methods, we have measured the energy separation between the subbands in a semimettalic InAsGaSb superlattice associated with the InAs conduction band (CB) and the GaSb valence band (VB) as a function of hydrostatic pressure up to 11kBar. The CB-VB energy overlap (Δ) at the InAsGaSb interface is found to depend less on pressure than predicted on grounds of usual assumptions concerning band energy shifts induced by pressure. Also inter-subband coupling has been observed between the bands in different adjacent materials. This coupling is found to lead to anti-crossing in the subband dispersion relation. © 1986.
T.N. Morgan
Semiconductor Science and Technology
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021