Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1-x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing. © 2006 Elsevier B.V. All rights reserved.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta