I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
This paper reviews the physical mechanisms that are responsible for interband resonant tunneling in type II heterostructures, in particular GaSb/AlSb/Ir,As/AlSb/GaSb. An analysis of their low-temperature current-voltage characteristics, when combined with the application of strong magnetic fields and hydrostatic pressure, provides detailed information on energy and momentum conservation rules, band parameters, and magnetic energy levels, including spin splitting of the lowest Landau level. © 1992.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009