Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory. © 1986 The American Physical Society.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
T.N. Morgan
Semiconductor Science and Technology
R.A. Webb, S. Washburn, et al.
Physical Review Letters