William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory. © 1986 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME