Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
Influence of hydrogen on PtSiO2Si structures
Abstract
It is shown that hydrogen in the ambient gives rise to a dipole layer at the PtSiO2 interface and to drifting charges in the oxide. These reversible effects were studied with internal photoemission, polarisation currents and quasistatic C(V)-measurements. © 1976.
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