W. Hansen, T.P. Smith III, et al.
Applied Physics Letters
Paper
Inelastic tunneling in AlAs-GaAs-AlAs heterostructures
Abstract
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
Related
C.E.T. Gonçalves Da Silva, E. Mendez
Physical Review B
W.I. Wang
Surface Science
Conference paper
LOW-TEMPERATURE MAGNETOTRANSPORT IN InAs-GaSb QUANTUM WELLS.
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984