F. Agulló-Rueda, E. Mendez, et al.
Solid State Communications
Paper
Inelastic tunneling in AlAs-GaAs-AlAs heterostructures
Abstract
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
Related
Conference paper
LOW-TEMPERATURE MAGNETOTRANSPORT IN InAs-GaSb QUANTUM WELLS.
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984
E. Mendez, P.J. Price, et al.
Applied Physics Letters
Conference paper
Exciton thermodynamics in coupled quantum wells (Invited Paper)
J.A. Kash, M. Zachau, et al.
SPIE Physics and Simulation of Optoelectronic Devices 1992