Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A simple model for inelastic electron tunnelling between a metal probe tip and a surface is presented. The inelastic tunnelling cross section resulting from vibrational or electronic excitation of an adsorbed molecule is estimated. The role thermal and, more important, non-thermal processes have on the measurement process is also discussed. © 1986.
T.N. Morgan
Semiconductor Science and Technology
Robert W. Keyes
Physical Review B
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SPIE Advanced Lithography 2010
J.H. Stathis, R. Bolam, et al.
INFOS 2005