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Investigations of silicon nano-crystal floating gate memories
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The inelastic Coulomb scattering rate in-1 of extended electrons by localized ones is considered and shown to be proportional to T2(lnT)d+1, where d is the dimensionality. This nonlinear dependence appears surprisingly linear over significant temperature regions, and its magnitude is large enough to account for in of, e.g. (normal- and super-)conducting oxides. © 1990 The American Physical Society.
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