Conal E. Murray
Materials Science and Engineering R: Reports
Novel techniques have been developed to simulate particle transport in arbitrarily complex back-end-of-line topologies. They are shown to be critical for single event effect analyses of new device structures for 65 nm CMOS technologies and beyond. The salient features of the new modeling methods are illustrated by the simulation results taken from several case studies of particle-induced radiation problems in the back end. © 2007 IEEE.
Conal E. Murray
Materials Science and Engineering R: Reports
Conal E. Murray, Andrew Ying, et al.
Journal of Applied Physics
Martin Sandberg, Vivekananda P. Adiga, et al.
Applied Physics Letters
Conal E. Murray, E. Todd Ryan, et al.
Powder Diffraction