A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Strain-relaxed Si1-xGex films have been investigated using X-ray microdiffraction with a diffracted beam footprint of 0.3 μm×2 μm. Intensity variations in the diffracted beam at different positions on the sample are due to the presence of local tilted regions which are larger in area than the diffracted X-ray beam. These regions are shown to have the same lattice parameter but different orientation with respect to the Si substrate. These regions arise from dislocation pileups, which consist of a larger number of dislocations when larger mismatch strain is relieved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Ming L. Yu
Physical Review B