C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
We have investigated hot carrier dynamics in GaSb structures, bulk and quantum wells, using picosecond time-resolved photoluminescence. Bulk samples show remarkably little carrier heating which we attribute to rapid electron relaxation within the L valleys. Quantum wells show slower cooling than the bulk, which is consistent with similar measurements of other III-V systems. Strong Auger recombination heating of the plasma is found to be responsible for maintaining relatively high temperatures at times ≥ 25 ps. © 1989.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry