Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Paper
High Surface Concentration Zn Diffusion in GaAs
Abstract
A high surface concentration layer is essential for obtaining good ohmic contact on GaAs devices. Zn diffusion in GaAs using Zn3As2, ZnAs2, Zn3As2 + ZnAs2, and ZnAs2 + As as diffusion sources at low temperatures (600°-730'C) has been studied. The resulting surfaces were reproducible and undamaged, and the surface concentrations were in the 1020 cm-3 range. © 1976, The Electrochemical Society, Inc. All rights reserved.
Related
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules