Conference paper
True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Paper
High Surface Concentration Zn Diffusion in GaAs
Abstract
A high surface concentration layer is essential for obtaining good ohmic contact on GaAs devices. Zn diffusion in GaAs using Zn3As2, ZnAs2, Zn3As2 + ZnAs2, and ZnAs2 + As as diffusion sources at low temperatures (600°-730'C) has been studied. The resulting surfaces were reproducible and undamaged, and the surface concentrations were in the 1020 cm-3 range. © 1976, The Electrochemical Society, Inc. All rights reserved.
Related
Robert W. Keyes
Physical Review B
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology