High performance SOI/Cu SRAMs and memories in microprocessors
R.V. Joshi, S.S. Kang, et al.
AMC 2001
This paper presents an ECL circuit with ac-coupled self-biased dynamic current source and active-pull-down emitter-follower stage for low-power high-speed gate array applications. The circuit features an ac-coupled dynamic current source to improve the power-delay of the logic stage (current switch). A novel self-biasing scheme for the dynamic current source and the active-pull-down transistor with no additional devices and power in the biasing circuit is described. Based on a 0.8-pm double-poly self-aligned bipolar technology at a power consumption of 1.0 mW/gate, the circuit offers 1.62 X (1.90 X) improvement in the speed (load driving capability) of a loaded gate compared with the conventional ECL circuit. The design considerations of the circuit are discussed. © 1992 IEEE
R.V. Joshi, S.S. Kang, et al.
AMC 2001
R.V. Joshi, F. Yee, et al.
IEEE International SOI Conference 2002
R.V. Joshi, A.J. Bhavnagarwala, et al.
IEEE International SOI Conference 2001
R. Puri, C.T. Chuang, et al.
IEEE Journal of Solid-State Circuits