Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. Narayanan, V.K. Paruchuri, et al.VLSI Technology 2006
PaperElectron energy loss spectroscopy of single silicon nanocrystals: The conduction bandP.E. Batson, J.R. HeathPhysical Review Letters
PaperSilicon L2,3 core absorption obtained at the buried Al/Si(111) interfaceP.E. BatsonPhysical Review B