High quality epitaxial Dy₃ Ge₅ films grown on Ge(001) substrates

Dy thin films are grown on Ge(001) substrates by molecular beam deposition at room temperature. Subsequently, the Dy films are annealed at a high temperature of 550 °C for the growth of Dy3 Ge5 films. Structural, morphological, and electrical properties of the Dy3 Ge5 films are investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction, atomic force microscopy, and resistivity measurements. Reflection high-energy electron diffraction patterns and x-ray diffraction spectra show that the Dy3 Ge3 film crystalline structure is formed and identified as an orthorhombic phase with smooth surface and with pits when annealing at a temperature of 500 °C. A smooth surface of the epitaxial Dy3 Ge3 film can be achieved with a reduced pit formation using a step-growth process. © 2011 American Vacuum Society.