Joachim N. Burghartz, Jean-Olivier Plouchart, et al.
IEEE Electron Device Letters
Circuit design techniques for realizing high-frequency, low-power phase-locked loops (PLL‘s) in monolithic silicon bipolar technology are discussed. A varactor-tuned voltage-controlled oscillator (VCO), an analog phase detector, and a bandgap reference have been utilized as building blocks. A test circuit fabricated in a 2-µm bipolar process exhibited a maximum center frequency of 350 MHz, and the PLL pull-in range was larger than ± 1 percent. The circuit operates from a 5-V supply and dissipates 270 mW. © 1989 IEEE
Joachim N. Burghartz, Jean-Olivier Plouchart, et al.
IEEE Electron Device Letters
Joachim N. Burghartz, Keith A. Jenkins, et al.
IEEE Electron Device Letters
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Transactions on Electron Devices
Timothy O. Dickson, Zeynep Toprak Deniz, et al.
IEEE JSSC