Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Paper
High electric field approximation to charge transport in semiconductor devices
Abstract
We consider the Boltzmann equation describing the charge transport in semiconductor devices, including the scattering of electrons with acoustic and optical phonons. Taking into account that at a high electric field the scattering events are nearly elastic, we develop a formal expansion for the distribution function valid for general band structures. © 1992.
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