Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Paper
Heteroepitaxy of InAs quantum wells
Abstract
Recent experimental results of InAs quantum wells clad with GaSb are described. It is shown that high quality GaSb is critical to the formation of the electron-hole system. The same results also apply to quantum wells with GaSb ternary alloys, where the densities of carrier can be controlled by varying the alloy composition. © 1989.
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