A. Krol, C.J. Sher, et al.
Surface Science
Si02 films, formed by spin coating acid-catalyzed TEOS-based sol-gel on Si substrates, were annealed at 300–1000 °C and analyzed using ellipsometry, FTIR, and in situ stress measurements. Film porosity ranged from an average of 28% before annealing to 7% after annealing 3 h at 1000 °C. Below ^800 °C, water and silanol removal caused a decrease in refractive index and increase in the in-plane tensile stress. Infrared spectra indicated compressive strain normal to the plane, however. Above =800 °C, further densification and structural relaxation occurred. Exposure to H20 also caused relaxation after annealing, as the most compressed Si-O-Si units reacted preferentially with moisture. © 1994, Materials Research Society. All rights reserved.
A. Krol, C.J. Sher, et al.
Surface Science
K.A. Chao
Physical Review B
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS