Marwan H. Khater, Zhen Zhang, et al.
IEEE Electron Device Letters
Paper
Growth and characterization of epitaxial Si/(LaxY1-x)2O3/Si heterostructures
Abstract
The effect of growth temperature on the growth mode and characterization of Si/(LaxY1-x)2O3/Si heterostructures was investigated. The fluorite and bixbyite epitaxy on silicon was investigated in the framework of a model which suggested that the mismatch between oxygen sublattice and silicon substrate was important for establishing epitaxial relations. The formation of a phase separated microstructure due to the low compressibility of epitaxial films prevented the perfect lattice matching of films to silicon.
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